sc u 4c60s jan 200 9 . rev. 0 1/5 cop yright @winsemi semiconductor co.,ltd.,all rights reserved. silicon silicon silicon silicon controlled controlled controlled controlled rectifiers rectifiers rectifiers rectifiers features features features features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 4 a ) low on-state voltage (1.6v(typ.) @ i tm ) general general general general description description description description sensitive gate triggering scr is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control cir cuit in power tool, inrush current limit circuit and heating control system. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings ( t j = 25 c unless otherwise specified ) thermal characteristics symbol condition parameter condition ratings units v drm repetitive peak off-state voltage 600 v i t(av) average on-state current ( 180 conduction angle ) t i = 60 c 1.35 a tamb=25 c 0.9 i t(rms) r.m.s on-state current ( 180 conduction angle ) t i = 60 c 4 a tamb=25 c 1.35 i tsm surge on-state current 1/2 cycle, 60hz, sine wave non-repetitive 33 a i 2 t i 2 t for fusing t = 10 ms 4.5 a 2 s di/dt critical rate of rise of on-state current f=60hz,tj=125 c 50 a/ ? p gm forward peak gate power dissipation 0.5 w p g(av) forward average gate power dissipation tj=125 c 0.2 w i fgm forward peak gate current 1.2a a t j operating junction temperature -40-125 c c t stg storage temperature -40-150 c c symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units r j c thermal resistance junction to case(dc) 15 /w r j a thermal resistance junction to ambient (dc) 100 /w g a k to to to to 251 251 251 251 k a g
sc u 4c60s 2 /5 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t c =25 unless otherwise noted) note: note: note: note: 1. pulse width = 1.0 ms , duty cycle 1% 2. r gk current not included in measurement symbol symbol symbol symbol parameter parameter parameter parameter test test test test conditions conditions conditions conditions value value value value units units units units min min min min typ typ typ typ max max max max i drm repetitive peak off-state current vak=vdrm rgk=1k - - 5 a - - 1 ma v tm peak on-state voltage (1) itm=8a, tp=380 ? - - 1.8 v i gt gate trigger current (2) vd=12v,rl=140 20 - 50 a v gt gate trigger voltage (2) - - 0.8 v v gd non-trigger gate voltage (1) vd=12v,rl= 3.3k , rgk=1 k 0.1 v dv/dt critical rate of rise off-state voltage vd=67%v drm , rgk=1 k 15 - - v/ ? i h holding current it=50ma, rgk=1 k - - 5 ma i l l atching c urrent it=1ma, rgk=1 k 6 - - ma r d dynamic resistance tj=125 c - - 100 m
sc u 4c60s 3 /5 fig. fig. fig. fig. 1 1 1 1 i i i i t(av) t(av) t(av) t(av) ( ( ( ( dc dc dc dc ) ) ) ) vs vs vs vs lead lead lead lead temperature temperature temperature temperature fig. fig. fig. fig. 2 2 2 2 p p p p d(av) d(av) d(av) d(av) vs vs vs vs i i i i t(av) t(av) t(av) t(av) fig. fig. fig. fig. 3 3 3 3 i i i i gt gt gt gt ,i ,i ,i ,i h h h h ,i ,i ,i ,i l l l l temperature temperature temperature temperature characteristics characteristics characteristics characteristics fig. fig. fig. fig. 4 4 4 4 i i i i tsm tsm tsm tsm vs vs vs vs number number number number oof oof oof oof cycles cycles cycles cycles fig.5 fig.5 fig.5 fig.5 dv/dt dv/dt dv/dt dv/dt vs vs vs vs r r r r gk gk gk gk fig.6 fig.6 fig.6 fig.6 dv/dt dv/dt dv/dt dv/dt vs vs vs vs c c c c gk gk gk gk
sc u 4c60s 4 /5 fig. fig. fig. fig. 7 7 7 7 on-state on-state on-state on-state characteristics characteristics characteristics characteristics fig.8 fig.8 fig.8 fig.8 r r r r j j j j a a a a vs vs vs vs pulse pulse pulse pulse duration duration duration duration
sc u 4c60s 5 /5 to to to to 251 251 251 251 package package package package dimension dimension dimension dimension unit:mm unit:mm unit:mm unit:mm
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